Response to anions of AlGaN∕GaN high-electron-mobility transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2149992
Reference15 articles.
1. Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures
2. High power GaN/AlGaN/GaN HEMTs operating at 2 to 25 GHz grown by plasma-assisted MBE
3. InAlN/(In)GaN high electron mobility transistors: some aspects of the quantum well heterostructure proposal
4. Current instabilities in GaN-based devices
5. Influence of gate-leakage current on drain current collapse of unpassivated GaN∕AlGaN∕GaN high electron mobility transistors
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