Influence of gate-leakage current on drain current collapse of unpassivated GaN∕AlGaN∕GaN high electron mobility transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1953873
Reference15 articles.
1. Trapping effects and microwave power performance in AlGaN/GaN HEMTs
2. The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs
3. Mechanism of radio-frequency current collapse in GaN–AlGaN field-effect transistors
4. Impact of Si doping on radio frequency dispersion in unpassivated GaN/AlGaN/GaN high-electron-mobility transistors grown by plasma-assisted molecular-beam epitaxy
5. Impact of layer structure on performance of unpassivated AlGaN∕GaN∕SiC HEMTs
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2. High-Performance AlGaN/GaN HEMTs With Hybrid Schottky–Ohmic Drain for Ka-Band Applications;IEEE Transactions on Electron Devices;2022-08
3. Impact of AlGaN/GaN Interface and Passivation on the Robustness of Low-Noise Amplifiers;IEEE Transactions on Electron Devices;2020-06
4. Performance Analysis of GaN/AlGaN HEMTs Passivation using Inductively Coupled Plasma Chemical Vapour Deposition and Plasma Enhanced Chemical Vapour Deposition Techniques;Defence Science Journal;2018-10-31
5. Small- and Large-Signal Analyses of Different Low-Pressure-Chemical-Vapor-Deposition SiN x Passivations for Microwave GaN HEMTs;IEEE Transactions on Electron Devices;2018-03
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