Trenched epitaxial lateral overgrowth of fast coalesced a-plane GaN with low dislocation density-Reference-Cited by-同舟云学术

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Trenched epitaxial lateral overgrowth of fast coalesced a-plane GaN with low dislocation density

Published:2006-12-18 Issue:25 Volume:89 Page:251109
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wang Te-Chung,Lu Tien-Chang,Ko Tsung-Shine,Kuo Hao-Chung,Yu Min,Wang Sing-Chung,Chuo Chang-Cheng,Lee Zheng-Hong,Chen Hou-Guang

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2405880

Reference11 articles.

1. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

2. Structural characterization of nonpolar (112̄0) a-plane GaN thin films grown on (11̄02) r-plane sapphire

3. Epitaxial Growth and Orientation of GaN on (1 0 0) γ-LiAlO2

4. Growth of M-Plane GaN(11-00): A Way to Evade Electrical Polarization in Nitrides

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1. Transparent Polycrystalline Magnesium Aluminate Spinel Fabricated by Spark Plasma Sintering;Advanced Materials;2018-06-19

2. Spatially resolved and orientation dependent Raman mapping of epitaxial lateral overgrowth nonpolar a-plane GaN on r-plane sapphire;Scientific Reports;2016-01-29

3. Fine grained Nd3+:Lu2O3 transparent ceramic with enhanced photoluminescence;Journal of the European Ceramic Society;2014-08

4. Phase control of semi-polar and non-polar GaN on cone shaped r-plane patterned sapphire substrates;Journal of Crystal Growth;2013-05

5. Study ofa-Plane GaN Epitaxial Lateral Overgrowth Using Carbonized Photoresist Mask onr-Plane Sapphire;Japanese Journal of Applied Physics;2012-11-01

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