Room temperature interactions of water vapor with HfO2 films on Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2203944
Reference17 articles.
1. High-? Gate Dielectrics
2. High-κ gate dielectrics: Current status and materials properties considerations
3. Si-SiO/sub 2/ interface state generation during X-ray irradiation and during post-irradiation exposure to a hydrogen ambient (MOSFET)
4. Variation in the fixed charge density of SiO[sub x]/ZrO[sub 2] gate dielectric stacks during postdeposition oxidation
5. H-related defect complexes in HfO2: A model for positive fixed charge defects
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