Compliance current dependence of conversion between bipolar, unipolar, and threshold resistance switching in Mn3O4 films-Reference-Cited by-同舟云学术

Compliance current dependence of conversion between bipolar, unipolar, and threshold resistance switching in Mn3O4 films

Published:2015-08 Issue:8 Volume:5 Page:087154
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Wu Shuxiang¹,Li Shuwei¹

Affiliation:

1. State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, China

Funder

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://scitation.aip.org/deliver/fulltext/aip/journal/adva/5/8/1.4929475.pdf?itemId=/content/aip/journal/adva/5/8/10.1063/1.4929475&mimeType=pdf&containerItemId=content/aip/journal/adva

Reference24 articles.

1. The missing memristor found

2. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

3. Beyond the barrier

4. Memristive switching mechanism for metal/oxide/metal nanodevices

5. Reverse-bias-induced bipolar resistance switching in Pt∕TiO2∕SrTi0.99Nb0.01O3∕Pt devices

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analog resistive switching behavior in BiCoO3 thin film;Solid-State Electronics;2024-02

2. The bipolar and self-rectifying resistive switching characteristics of UiO-66 modified with uric acid;MRS Communications;2023-03-08

3. Bipolar resistive switching with multiple intermediate resistance states in Mn3O4 thin film;Materials Today Communications;2023-03

4. Conversion of bipolar resistive switching and threshold switching by controlling conductivity behavior and porous volumes of UiO-66 thin films;Journal of Science: Advanced Materials and Devices;2023-03

5. Forming-free bipolar resistive switching characteristics in Al/Mn3O4/FTO RRAM device;Journal of Physics and Chemistry of Solids;2022-06