Phase transformation behaviors of SiO2 doped Ge2Sb2Te5 films for application in phase change random access memory
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2898719
Reference13 articles.
1. Overview of Phase-Change Chalcogenide Nonvolatile Memory Technology
2. Changes in the electronic structures and optical band gap of Ge2Sb2Te5 and N-doped Ge2Sb2Te5 during phase transition
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