Changes in the electronic structures and optical band gap of Ge2Sb2Te5 and N-doped Ge2Sb2Te5 during phase transition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2722203
Reference14 articles.
1. Compound materials for reversible, phase‐change optical data storage
2. Laser induced crystallization of amorphous Ge2Sb2Te5 films
3. Rewritable phase-change optical recording in Ge2Sb2Te5 films induced by picosecond laser pulses
4. Crystal structure of GeTe and Ge2Sb2Te5 meta-stable phase
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