Intersubband transitions in asymmetric AlxGa1−xN∕GaN double quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2745422
Reference21 articles.
1. Intersubband absorption at λ∼1.3 μm in optimized GaN/AlGaN Bragg-confined structures
2. Intersubband absorption in GaN/AlGaN multiple quantum wells in the wavelength range of λ∼1.75–4.2 μm
3. Feasibility Study on Ultrafast Nonlinear Optical Properties of 1.55-µ m Intersubband Transition in AlGaN/GaN Quantum Wells
4. GaN/AlN-based quantum-well infrared photodetector for 1.55 μm
5. Sub-picosecond electron scattering time for ≃ 1.55 [micro sign]m intersubband transitions in GaN/AlGaN multiple quantum wells
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1. Influence of thin AlAs layer insertion on intersubband optical transitions in GaAs/AlGaAs quantum- well structures;Physica E: Low-dimensional Systems and Nanostructures;2017-02
2. Control of intersubband transitions in multiple quantum well systems;Physica E: Low-dimensional Systems and Nanostructures;2014-07
3. Optical properties of nonpolar III-nitrides for intersubband photodetectors;Journal of Applied Physics;2013-04-07
4. Dynamics of intersubband transitions in triangular quantum wells due to static magnetic and laser fields;Journal of Luminescence;2013-04
5. Intersubband absorption in strained AlGaN/GaN double quantum wells;Physica B: Condensed Matter;2011-10
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