Low‐loss optical waveguides made with molecular beam epitaxial In0.012Ga0.988As and In0.2Ga0.8As‐GaAs superlattices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96902
Reference13 articles.
1. Variation of refractive index in strained InxGa1−xAs‐GaAs heterostructures
2. Properties of InxGa1−xAs‐GaAs strained‐layer quantum‐well‐heterostructure injection lasers
3. Properties of InxGa1−xAs‐GaAs strained‐layer quantum‐well‐heterostructure injection lasers
4. High‐efficiency (21.4%) Ga0.75In0.25As/GaAs (Eg=1.15 eV) concentrator solar cells and the influence of lattice mismatch on performance
5. A new GaAsP—InGaAs strained-layer super-lattice light-emitting diode
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1. Direct writing of GaAs optical waveguides by laser‐assisted chemical vapor deposition;Applied Physics Letters;1996-04-08
2. The refractive index of III–V semiconductor strained-layer superlattices;Optical and Quantum Electronics;1991-07
3. Characteristics of indium‐doped GaAs layers grown by liquid phase epitaxy with indium content in the range (0.3–7)×1019cm−3;Journal of Applied Physics;1991-03-15
4. TRAP SUPPRESSION IN n AND p MBE GROWN GaAs BY ISOELECTRONIC (In OR Sb) DOPING AND SELECTION OF SUITABLE GROWTH PARAMETERS;Defect Control in Semiconductors;1990
5. Photoreflectance Spectroscopy of InGaAs/GaAs Strained Superlattice Waveguides;Quantum Wells for Optics and Optoelectronics;1989
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