Measurement of Hall scattering factor in phosphorus‐doped silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.334333
Reference23 articles.
1. Resistivity of Bulk Silicon and of Diffused Layers in Silicon
2. An automatic smoothing algorithm for the calculation of impurity concentration from sheet resistivity and sheet hall coefficient data
3. Relationship between carrier mobility and electron concentration in silicon heavily doped with phosphorus
4. Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon
5. Electrical Properties of Silicon Containing Arsenic and Boron
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