Characteristics of InN epilayers grown with H2-assistance
Author:
Affiliation:
1. Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, China
Funder
Ministry of Science and Technology of the People's Republic of China
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5001546
Reference36 articles.
1. Optical bandgap energy of wurtzite InN
2. Unusual properties of the fundamental band gap of InN
3. Growth Temperature Dependence of Indium Nitride Crystalline Quality Grown by RF-MBE
4. Unusual properties of the fundamental band gap of InN
5. Physical properties of InN with the band gap energy of 1.1eV
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2. Study on Preparation and Properties of InN Films on Self-Supporting Diamond Substrates Under Different Nitrogen Flows;Frontiers in Materials;2020-06-10
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