Deep center luminescence (1.02 eV) in GaAs/(GaAl)As epitaxial layers and double-heterostructure lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.90273
Reference10 articles.
1. On the infrared luminescence of GaAs1-xPx
2. Stoichiometric effects in the growth of doped epitaxial layers of GaAs1-χPχ
3. Optical Properties of n‐Type GaAs. II. Formation of Efficient Hole Traps during Annealing in Te‐Doped GaAs
4. Enhanced degradation and deep‐level formation at dislocations in GaAs0.6P0.4LED’s
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Deep levels and DX centers in AlxGa1−xAs/GaAs. II. Field effect deep level transient spectroscopy study;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1992-01
2. Cathodoluminescence mapping, deep‐level transient spectroscopy, and electron‐beam‐induced current measurements on GaAs layers grown on Si substrates by metalorganic chemical vapor deposition;Journal of Applied Physics;1989-10-15
3. The relationship of the D-X centre in AlxGa1-xAs and other III-V alloys with the conduction band structure;Semiconductor Science and Technology;1988-12-01
4. New radiative deep states in epitaxial Ga1−xAlxAs;Applied Physics Letters;1980-04-15
5. Rôle des centres profonds dans la dégradation lente des dispositifs électroluminescents;Revue de Physique Appliquée;1980
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