Enhanced degradation and deep‐level formation at dislocations in GaAs0.6P0.4LED’s
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.89374
Reference15 articles.
1. Stoichiometric effects in the growth of doped epitaxial layers of GaAs1-χPχ
2. On the infrared luminescence of GaAs1-xPx
3. Effect of Donor Concentration on Several Properties of Gallium Arsenide Phosphide
4. The interpretation of dislocation contrast in x‐ray topographs of GaAs1−x Px
5. On Dislocations in GaAs1−xPx
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Degradation mechanism of Mo/GaAs0.6P0.4Schottky barriers;Journal of Applied Physics;1983-08
2. Physical nature of degradation of light-emitting diodes and semiconductor lasers;Journal of Applied Spectroscopy;1983-03
3. Electron traps around dislocations in GaP;Physica Status Solidi (a);1979-11-16
4. ELECTRICAL EFFECTS OF DISLOCATIONS IN GALLIUM ARSENIDE;Le Journal de Physique Colloques;1979-06
5. Native levels and degradation in GaAs0.6P0.4 LEDs;Solid-State Electronics;1979-01
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