Enhancing the Cu2ZnSnS4 solar cell efficiency by back contact modification: Inserting a thin TiB2 intermediate layer at Cu2ZnSnS4/Mo interface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4863736
Reference28 articles.
1. Grain-boundary recombination in Cu(In,Ga)Se2 solar cells
2. Anomalous Grain Boundary Physics in PolycrystallineCuInSe2: The Existence of a Hole Barrier
3. The path towards a high-performance solution-processed kesterite solar cell
4. Chemical Insights into the Instability of Cu2ZnSnS4 Films during Annealing
5. On the kinetics of MoSe2 interfacial layer formation in chalcogen-based thin film solar cells with a molybdenum back contact
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