On the kinetics of MoSe2 interfacial layer formation in chalcogen-based thin film solar cells with a molybdenum back contact
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4794422
Reference11 articles.
1. Control of an interfacial MoSe2 layer in Cu2ZnSnSe4 thin film solar cells: 8.9% power conversion efficiency with a TiN diffusion barrier
2. Thin film solar cell with 8.4% power conversion efficiency using an earth-abundant Cu2ZnSnS4absorber
3. Low band gap liquid-processed CZTSe solar cell with 10.1% efficiency
4. Device characteristics of a 10.1% hydrazine-processed Cu2ZnSn(Se,S)4 solar cell
5. Co-evaporated Cu2ZnSnSe4 films and devices
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3. Enhancement of Cu2ZnSn(S, Se)4 device performance using an IPA/MOE hybrid solvent system in ambient air;Physical Chemistry Chemical Physics;2024
4. Tailoring the Back Contact Properties of Cu2ZnSn(S,Se)4 Thin Film with Mo-Foil by Introducing a Transparent CuCrO2 Buffer Layer;Journal of Electronic Materials;2023-05-16
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