Revisiting radiative deep-level transitions in CuGaSe2 by photoluminescence
Author:
Affiliation:
1. Laboratory for Photovoltaics, Physics and Material Science Research Unit, University of Luxembourg, Rue du Brill 41, L-4422 Belvaux, Luxembourg
Funder
Fonds National de la Recherche Luxembourg (FNR)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4959557
Reference25 articles.
1. Quasi-Fermi level splitting and identification of recombination losses from room temperature luminescence in Cu(In1−xGax)Se2 thin films versus optical band gap
2. Effect of Ga content on defect states in CuIn1−xGaxSe2 photovoltaic devices
3. Properties of Cu(In,Ga)Se2 solar cells with new record efficiencies up to 21.7%
4. Structural tuning of wide-gap chalcopyrite CuGaSe2 thin films and highly efficient solar cells: differences from narrow-gap Cu(In,Ga)Se2
5. Prospects of wide-gap chalcopyrites for thin film photovoltaic modules
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