Improved Sequentially Processed Cu(In,Ga)(S,Se)2 by Ag Alloying

Author:

Prot Aubin Jean‐Claude Mireille1ORCID,Melchiorre Michele1ORCID,Schaaf Tilly1,Poeira Ricardo Gonçalinho2ORCID,Elanzeery Hossam3ORCID,Lomuscio Alberto3ORCID,Oueslati Souhaib3ORCID,Zelenina Anastasia3,Dalibor Thomas3ORCID,Kusch Gunnar4ORCID,Hu Yucheng4ORCID,Oliver Rachel Angharad4ORCID,Siebentritt Susanne1ORCID

Affiliation:

1. Laboratory for Photovoltaics, Physics and Materials Science Research Unit University of Luxembourg 41 rue du Brill L‐4422 Belvaux Luxembourg

2. Laboratory for Energy Materials, Physics and Materials Science Research Unit University of Luxembourg 41 rue du Brill L‐4422 Belvaux Luxembourg

3. AVANCIS GmbH Otto‐Hahn‐Ring 6 81739 München Germany

4. Department of Materials Science and Metallurgy University of Cambridge 27 Charles Babbage Road Cambridge CB3 0FS UK

Abstract

Alloying small quantities of silver into Cu(In,Ga)Se2 is shown to improve the efficiency for wide and low bandgap solar cells. Low bandgap industrial Cu(In,Ga)(S,Se)2 absorbers are studied, substituting less than 10% of the copper with silver, using absolute photoluminescence and cathodoluminescence spectroscopy. Silver improves the grain size and promotes the interdiffusion of Ga and In across the depth of the absorber, resulting in a smoother bandgap gradient. However, a certain lateral inhomogeneity is observed near the front and back sides. The nonradiative losses in the bare absorbers are reduced by up to 30 meV.

Funder

Engineering and Physical Sciences Research Council

Publisher

Wiley

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