Quasi-one-dimensional transport characteristics of ridge-type InGaAs quantum-wire field-effect transistors-Reference-Cited by-同舟云学术

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Quasi-one-dimensional transport characteristics of ridge-type InGaAs quantum-wire field-effect transistors

Published:2001-07-16 Issue:3 Volume:79 Page:371-373
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sugaya Takeyoshi,Ogura Mutsuo,Sugiyama Yoshinobu,Shimizu Toshiyuki,Yonei Kenji,Jang Kee Youn,Bird Jonathan P.,Ferry David K.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1385344

Reference13 articles.

1. Single quantum wire semiconductor lasers

2. AlGaAs/GaAs quantum wire lasers fabricated by flow rate modulation epitaxy

3. Fabrication of GaAs quantum wires on epitaxially grown V grooves by metal‐organic chemical‐vapor deposition

4. Formation of GaAs ridge quantum wire structures by molecular beam epitaxy on patterned substrates

5. Effects of As2Flux and Atomic Hydrogen Irradiation for Growth of InGaAs Quantum Wires by Molecular Beam Epitaxy

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced Zeeman splitting in Ga0.25In0.75As quantum point contacts;Applied Physics Letters;2008-07-07

2. Surface Structure Dependent Growth of InAs/InAlAs Quantum Wires on InP(100).;Advanced Materials Research;2007-11

3. Diffusion of interacting particles in one-dimensional heterogeneous systems;Surface Science;2006-05

4. Negative differential resistance effects of trench-type InGaAs quantum-wire field-effect transistors with 50-nm gate-length;Applied Physics Letters;2003-07-28

5. Magneto-conductance fluctuations in a V-grooved GaAs quantum-wire;Physica E: Low-dimensional Systems and Nanostructures;2003-07

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