Strong band-filling-dependence of the scattering lifetime in gated MoS 2 nanolayers induced by the opening of intervalley scattering channels-Reference-Cited by-同舟云学术

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Strong band-filling-dependence of the scattering lifetime in gated MoS 2 nanolayers induced by the opening of intervalley scattering channels

Published:2020-08-14 Issue:6 Volume:128 Page:063907
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Romanin Davide¹^ORCID,Brumme Thomas²³,Daghero Dario¹^ORCID,Gonnelli Renato S.¹^ORCID,Piatti Erik¹^ORCID

Affiliation:

1. Department of Applied Science and Technology, Politecnico di Torino, I-10129 Torino, Italy

2. Wilhelm-Ostwald-Institut für Physikalische und Theoretische Chemie, Linnéstraße 2, 04103 Leipzig, Germany

3. Theoretische Chemie, Technische Universität Dresden, Bergstraße 66c, 01062 Dresden, Germany

Funder

CINECA

Ministero dell'Istruzione, dell'Università e della Ricerca

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0017921

Reference85 articles.

1. Liquid-gated interface superconductivity on an atomically flat film

2. Superconducting Dome in a Gate-Tuned Band Insulator

3. Electrostatically Induced Superconductivity at the Surface of WS2

4. Superconductivity Series in Transition Metal Dichalcogenides by Ionic Gating

5. Gate-tunable phase transitions in thin flakes of 1T-TaS2

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2. The impact of valley profile on the mobility and Kerr rotation of transition metal dichalcogenides;2D Materials;2023-01-24

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4. 2D Quantum materials: Magnetism and superconductivity;Journal of Applied Physics;2021-11-14

5. Ionic gating in metallic superconductors: A brief review;Nano Express;2021-05-24

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