Oxidation‐enhanced diffusion of ion‐implanted boron in silicon in extrinsic conditions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.334416
Reference23 articles.
1. Orientation dependence of the diffusion of boron in silicon
2. Effect of oxidation on orientation-dependent boron diffusion in silicon
3. Diffusion and segregation of ion-implanted boron in silicon in dry oxygen ambients
4. Boron Segregation at Si ‐ SiO2 Interface as a Function of Temperature and Orientation
5. Temperature dependence of boron diffusion in (111), (110) and (100) silicon
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