Surface passivation of heavily boron or phosphorus doped crystalline silicon utilizing amorphous silicon
Author:
Affiliation:
1. Institute for Photovoltaics, University of Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany
Funder
Bundesministerium für Wirtschaft und Energie (BMWi)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4948945
Reference49 articles.
1. Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3
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4. Laser-Doped Back-Contact Solar Cells
5. Symmetrical Al2O3-based passivation layers for p- and n-type silicon
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1. Recent Progress in Understanding the Properties of the Amorphous Silicon/Crystalline Silicon Interface;physica status solidi (a);2019-05-16
2. Mechanism for phosphorus deactivation in silicon-based Schottky diodes submitted to MW-ECR hydrogen plasma;Applied Physics A;2018-09-18
3. Amorphous silicon passivation for 23.3% laser processed back contact solar cells;Japanese Journal of Applied Physics;2017-07-14
4. 23.2% laser processed back contact solar cell: fabrication, characterization and modeling;Progress in Photovoltaics: Research and Applications;2016-12-02
5. Band gap narrowing models tested on low recombination phosphorus laser doped silicon;Journal of Applied Physics;2016-10-21
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