Reduction of the efficiency droop in silicon nitride light-emitting devices by localized surface plasmons
Author:
Funder
National Natural Science Foundation of China
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4793757
Reference16 articles.
1. Light emission properties and mechanism of low-temperature prepared amorphous SiNX films. II. Defect states electroluminescence
2. Enhancement of light-extraction efficiency of SiNx light emitting devices through a rough Ag island film
3. Improved electroluminescence from silicon nitride light emitting devices by localized surface plasmons
4. Origin of efficiency droop in GaN-based light-emitting diodes
5. Reduction in the efficiency droop effect of a light-emitting diode through surface plasmon coupling
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