Reduction in the efficiency droop effect of a light-emitting diode through surface plasmon coupling
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3459151
Reference14 articles.
1. Defect related issues in the “current roll-off” in InGaN based light emitting diodes
2. Improvements of external quantum efficiency of InGaN-based blue light-emitting diodes at high current density using GaN substrates
3. Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2
4. On the importance of radiative and Auger losses in GaN-based quantum wells
5. Auger recombination in InGaN measured by photoluminescence
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2. Spatial and time-resolved properties of emission enhancement in polar/semi-polar InGaN/GaN by surface plasmon resonance;Nanophotonics;2024-02-07
3. Significant improvement of green light emission efficiency of InGaN/GaN quantum wells by depositing oxide thin films and ultraviolet light irradiations;2023-02-20
4. Surface plasmon coupling effects on the behaviors of radiative and non-radiative recombination in an InGaN/GaN quantum well;Journal of Applied Physics;2023-01-12
5. Enhancement of the Modulation Response of Quantum-Dot-Based Down-Converted Light through Surface Plasmon Coupling;Molecules;2022-03-17
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