Enhanced dielectric properties of Be-doped magnesium oxide nanopowder

Abstract

Owing to its applicability in refractory ceramic synthesis, nanoelectronics, optoelectronic and sensing devices, and superconducting products, magnesium oxide (MgO) is recognized to be an important ceramic material. However, it has a relatively low dielectric constant compared to other metal oxide semiconductors, which restricts the range of its bandgap and limits its applicability. Therefore, in this study, we propose and verify a method to improve the dielectric constant of MgO. A sample of MgO powder doped with Be ions was prepared using the Pechini method. The crystal structure of the doped MgO powder was analyzed by x-ray diffraction. Through structural analysis, it was confirmed that a substitution amount of up to 5% of Be ions was possible without breaking the cubic structure. The bonding structure in the lattice of the sample was identified through x-ray photoelectron spectroscopy, and the change in the bonding structure according to the amount of substitution was identified. The dielectric properties of the samples were analyzed as a function of frequency at room temperature. The real and imaginary parts of the dielectric constant were studied at room temperature as a function of frequency and composition. It was confirmed that the dielectric constant increased as the Be ions were substituted. Our results show that improving the low dielectric properties of pure MgO can enable its application to wide bandgap and high voltage applications simultaneously.