2 MeV electron irradiation of silicon at elevated temperatures: Influence on platinum diffusion and creation of electrically active defects
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.369773
Reference25 articles.
1. Comparison of gold, platinum, and electron irradiation for controlling lifetime in power rectifiers
2. Defect production and lifetime control in electron and γ‐irradiated silicon
3. Improvement in switching characteristics of silicon diodes through a selective zone of defects produced by 6 MeV electrons
4. Temperature and injection dependence of the Shockley–Read–Hall lifetime in electron irradiatedn‐type silicon
5. Proximity gettering of platinum in proton irradiated silicon
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