Electron scattering due to dislocation wall strain field in GaN layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3147744
Reference29 articles.
1. GaN: Processing, defects, and devices
2. Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire
3. High dislocation densities in high efficiency GaN‐based light‐emitting diodes
4. Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films
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3. Effects of Mg and Al doping on dislocation slips in GaN;Journal of Applied Physics;2016-02-14
4. Core structures analyses of (a+c)-edge dislocations in wurtzite GaN through atomistic simulations and Peierls–Nabarro model;Journal of Applied Physics;2015-05-21
5. Dopant-site-dependent scattering by dislocations in epitaxial films of perovskite semiconductor BaSnO3;APL Materials;2014-05
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