Dopant-site-dependent scattering by dislocations in epitaxial films of perovskite semiconductor BaSnO3-Reference-Cited by-同舟云学术

Dopant-site-dependent scattering by dislocations in epitaxial films of perovskite semiconductor BaSnO3

Published:2014-05 Issue:5 Volume:2 Page:056107
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Kim Useong,Park Chulkwon,Ha Taewoo,Kim Rokyeon,Mun Hyo Sik,Kim Hoon Min,Kim Hyung Joon,Kim Tai Hoon,Kim Namwook,Yu Jaejun,Kim Kee Hoon,Kim Jae Hoon,Char Kookrin

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4874895

Reference42 articles.

1. Effect of threading dislocations on mobility in selectively doped heterostructures grown on Si substrates

2. Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures

3. Electron scattering due to dislocation wall strain field in GaN layers

4. Mobility in epitaxial GaN: Limitations of free-electron concentration due to dislocations and compensation

5. Dislocation Scattering in GaN

Cited by 63 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ferroelectric switching and field effect of Pb(Zr0.7Ti0.3)O3 on Ba1−xLaxSnO3;Physical Review Materials;2024-08-07

2. Electric field control of the energy gap in ZnO and BaSnO3 films grown on PMN-PT;Applied Physics Letters;2024-07-01

3. Tuning the structural and electronic characteristics of La0.07Sr0.93SnO3 thin films through co-doping with antimony;Ceramics International;2024-05

4. Tungsten-doped barium stannate as a transparent conducting film;Journal of Materials Chemistry C;2024

5. Fully Deep‐UV Transparent Thin Film Transistors Based on SrSnO₃;Advanced Electronic Materials;2023-10-15