Pinning of recombination-enhanced dislocation motion in 4H–SiC: Role of Cu and EH1 complex
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3442907
Reference25 articles.
1. Polytypic transformations in silicon carbide
2. Degradation of hexagonal silicon-carbide-based bipolar devices
3. Electron-beam-induced current and cathodoluminescence study of dislocation arrays in 4H-SiC homoepitaxial layers
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