Can normal‐incidence absorption be realized withn‐doped (001)‐grown direct‐gap quantum wells?
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.360674
Reference25 articles.
1. First observation of an extremely large‐dipole infrared transition within the conduction band of a GaAs quantum well
2. Analysis of normal‐incident absorption inp‐type quantum‐well infrared photodetectors
3. Insituscanning‐tunneling‐microscopy studies of current driven mass transport in Ag
4. Intersubband absorption of silicon‐based quantum wells for infrared imaging
5. Calculation of the intersubband absorption strength in ellipsoidal-valley quantum wells
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1. Intersubband absorption in n-type GaAs/AlGaAs (001) quantum wells: A tight-binding study;physica status solidi (b);2004-03
2. Analysis of AlGaAs/GaAs/InGaAs n-type step multiple quantum wells for the optimization of normal incident absorption;Semiconductor Science and Technology;2002-08-14
3. Application of analytical k.p model with envelope function approximation to intersubband transitions in n-type III–V semiconductor Γ quantum wells;Journal of Applied Physics;2002-04-15
4. Responsivities of n-type GaAs/InGaAs/AlGaAs step multiple-quantum-well infrared detectors;Applied Physics Letters;2002-01-07
5. Quantum theory of infrared detectors based on intrasubband transitions in III–V quantum wells;Journal of Applied Physics;2001-01-15
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