Analysis of AlGaAs/GaAs/InGaAs n-type step multiple quantum wells for the optimization of normal incident absorption
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference27 articles.
1. Quantum‐well infrared photodetectors
2. New mode of IR detection using quantum wells
3. Application of analytical k.p model with envelope function approximation to intersubband transitions in n-type III–V semiconductor Γ quantum wells
4. New method for calculating electronic properties of superlattices using complex band structures
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. 红外光电探测技术研究现状及展望(特邀);ACTA PHOTONICA SINICA;2021
2. Performance analysis of AlGaAs/GaAs/InGaAs-based asymmetric long-wavelength QWIP;Applied Physics A;2019-06-11
3. Intersubband Transition in Asymmetric Quantum Well Infrared Photodetector;IEEE Transactions on Nanotechnology;2013-07
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