Properties of GaN-based nanopillar-shaped crystals grown on a multicrystalline Si substrate-Reference-Cited by-同舟云学术

Properties of GaN-based nanopillar-shaped crystals grown on a multicrystalline Si substrate

Published:2018-01 Issue:1 Volume:8 Page:015004
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Fujiwara Atomu¹,Sato Yuichi¹

Affiliation:

1. Department of Mathematical Science and Electrical-Electronic-Computer Engineering, Graduate School of Engineering Science, Akita University, 1-1 Tegata-gakuen, Akita 010-8502, Japan

Funder

MEXT | Japan Society for the Promotion of Science

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference27 articles.

1. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

2. Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LED

3. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

4. InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets

5. THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN

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1. Characterization of GaN‐Based Nanopillar Light‐Emitting Diodes on Multicrystalline Si Substrates: Insights into Emitting‐Color Distribution Characteristics;physica status solidi (b);2024-04-05

2. Growth and characterization of Mg-doped GaN and InGaN nanopillar-crystals based on steering-crystal-formed multi-crystalline Si substrates;Japanese Journal of Applied Physics;2023-12-15

3. Optical-Emission Properties of GaN-Based Nanopillar Light-Emitting Diodes Prepared on Non-Polished and Non-Single-Crystalline Substrates;Key Engineering Materials;2023-12-05

4. Growth and characterization of InN nanopillar-crystals on steering-crystal-formed multi-crystalline Si substrates;Journal of Crystal Growth;2021-11

5. GaN-nanopillar-based light-emitting diodes directly grown on multi-crystalline Si substrates;AIP Advances;2021-07-01