Growth and characterization of InN nanopillar-crystals on steering-crystal-formed multi-crystalline Si substrates-Reference-Cited by-同舟云学术

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Growth and characterization of InN nanopillar-crystals on steering-crystal-formed multi-crystalline Si substrates

Published:2021-11 Issue: Volume:573 Page:126310
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Xue Houyao,Shiraishi Koki,Izuka Yosuke,Saito Sora,Taniguchi Shingo,Saito Tsubasa,Sato Yuichi

Funder

Japan Society for the Promotion of Science

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference21 articles.

1. Band Gap of Hexagonal InN and InGaN Alloys

2. J. Wu, W. Walukiewicz, K.M. Yu, J.W. Ager III, E.E. Haller, H. Lu, W.J. Schaff, Y. Saito, Y. Nanishi, Appl. Phys. Lett. 80 (2002) 3967.

3. Optical bandgap energy of wurtzite InN

4. THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN

5. RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of GaN‐Based Nanopillar Light‐Emitting Diodes on Multicrystalline Si Substrates: Insights into Emitting‐Color Distribution Characteristics;physica status solidi (b);2024-04-05

2. Growth and characterization of Mg-doped GaN and InGaN nanopillar-crystals based on steering-crystal-formed multi-crystalline Si substrates;Japanese Journal of Applied Physics;2023-12-15

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