Tuning the band topology of GdSb by epitaxial strain-Reference-Cited by-同舟云学术

Tuning the band topology of GdSb by epitaxial strain

Published:2023-11-01 Issue:11 Volume:11 Page:
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:

Author:

Inbar Hadass S.¹^ORCID,Ho Dai Q.²³^ORCID,Chatterjee Shouvik⁴^ORCID,Engel Aaron N.¹^ORCID,Khalid Shoaib⁵^ORCID,Dempsey Connor P.⁴^ORCID,Pendharkar Mihir⁴^ORCID,Chang Yu Hao¹,Nishihaya Shinichi¹^ORCID,Fedorov Alexei V.⁶^ORCID,Lu Donghui⁷^ORCID,Hashimoto Makoto⁷^ORCID,Read Dan⁴⁸^ORCID,Janotti Anderson²^ORCID,Palmstrøm Christopher J.¹⁴^ORCID

Affiliation:

1. Materials Department, University of California Santa Barbara 1 , Santa Barbara, California 93106, USA

2. Department of Materials Science and Engineering, University of Delaware 2 , Newark, Delaware 19716, USA

3. Faculty of Natural Sciences, Quy Nhon University 3 , Quy Nhon 59000, Vietnam

4. Electrical and Computer Engineering Department, University of California Santa Barbara 4 , Santa Barbara, California 93106, USA

5. 5 Department of Physics, School of Natural Sciences, National University of Science and Technology, Islamabad 44000, Pakistan

6. Advanced Light Source, Lawrence Berkeley National Laboratory 6 , Berkeley, California 94720, USA

7. Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory 7 , Menlo Park, California 94025, USA

8. School of Physics and Astronomy, Cardiff University 8 , Cardiff CF24 3AA, United Kingdom

Abstract

Rare-earth monopnictide (RE-V) semimetal crystals subjected to hydrostatic pressure have shown interesting trends in magnetoresistance, magnetic ordering, and superconductivity, with theory predicting pressure-induced band inversion. Yet, thus far, there have been no direct experimental reports of interchanged band order in RE-Vs due to strain. This work studies the evolution of band topology in biaxially strained GdSb(001) epitaxial films using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT). As biaxial strain is tuned from tensile to compressive strain, the gap between the hole and the electron bands dispersed along [001] decreases. The conduction and valence band shifts seen in DFT and ARPES measurements are explained by a tight-binding model that accounts for the orbital symmetry of each band. Finally, we discuss the effect of biaxial strain on carrier compensation and magnetic ordering temperature.

Funder

U.S. Department of Energy

Office of Naval Research

National Science Foundation

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

https://pubs.aip.org/aip/apm/article-pdf/doi/10.1063/5.0155218/18196383/111106_1_5.0155218.pdf

Reference61 articles.

1. Strain Engineering of Low‐Dimensional Materials for Emerging Quantum Phenomena and Functionalities