Strain Engineering of the Band Gap of HgTe Quantum Wells Using Superlattice Virtual Substrates-Reference-Cited by-同舟云学术

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Strain Engineering of the Band Gap of HgTe Quantum Wells Using Superlattice Virtual Substrates

Published:2016-08-19 Issue:8 Volume:117 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Leubner Philipp,Lunczer Lukas,Brüne Christoph,Buhmann Hartmut,Molenkamp Laurens W.

Funder

Deutsche Forschungsgemeinschaft

Defense Advanced Research Projects Agency

European Research Council

Helmholtz-Gemeinschaft

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.117.086403/fulltext

Reference17 articles.

1. Quantum Spin Hall Insulator State in HgTe Quantum Wells

2. Nonlocal Transport in the Quantum Spin Hall State

3. Spin polarization of the quantum spin Hall edge states

4. Quantum Hall Effect from the Topological Surface States of Strained Bulk HgTe

5. Dirac-Screening Stabilized Surface-State Transport in a Topological Insulator

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