Antiphase domains in GaAs grown on a (001)‐oriented Si substrate by molecular‐beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341698
Reference24 articles.
1. Material properties of high‐quality GaAs epitaxial layers grown on Si substrates
2. Molecular Beam Epitaxy of Controlled Single Domain GaAs on Si (100)
3. Effects of the Substrate Offset Angle on the Growth of GaAs on Si Substrate
4. Antiphase domain structures in GaP and GaAs epitaxial layers grown on Si and Ge
5. Some observations on Ge:GaAs(001) and GaAs:Ge(001) interfaces and films
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