Characterization of ion damage on p‐type cadmium telluride surfaces
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341581
Reference11 articles.
1. Sputtered indium-tin oxide/cadmium telluride junctions and cadmium telluride surfaces
2. Sputtered oxide/indium phosphide junctions and indium phosphide surfaces
3. Type conversion, contacts, and surface effects in electroplated CdTe films
4. Ionized beam doping in molecular‐beam epitaxy of GaAs and AlxGa1−xAs
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1. Luminescence investigation of ion milled CdTe;physica status solidi (c);2006-03
2. Characterization of tellurium layers for back contact formation on close to technology treated CdTe surfaces;Journal of Applied Physics;2003-09
3. Effect of ion beam milling on the defect structure of CdTe;Semiconductor Science and Technology;1996-09-01
4. p‐ to n‐type conversion in GaSb by ion beam milling;Applied Physics Letters;1995-12-11
5. ION- AND PHOTON-ASSISTED p-TYPE DOPING OF CdTe DURING PHYSICAL VAPOR DEPOSITION;International Journal of Solar Energy;1992-01
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