Temperature enhancement of terahertz responsivity of plasma field effect transistors-Reference-Cited by-同舟云学术

Temperature enhancement of terahertz responsivity of plasma field effect transistors

Published:2012-07 Issue:1 Volume:112 Page:014506
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Klimenko Oleg A.,Knap Wojciech,Iniguez Benjamin,Coquillat Dominique,Mityagin Yury A.,Teppe Frederic,Dyakonova Nina,Videlier Hadley,But Dmitry,Lime Francois,Marczewski Jacek,Kucharski Krzysztof

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4733465

Reference21 articles.

1. Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current

2. Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid

3. Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors

4. AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

5. Room-temperature terahertz emission from nanometer field-effect transistors

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