Full-zone spectral envelope function formalism for the optimization of line and point tunnel field-effect transistors-Reference-Cited by-同舟云学术

Full-zone spectral envelope function formalism for the optimization of line and point tunnel field-effect transistors

Published:2015-10-07 Issue:13 Volume:118 Page:134502
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Verreck Devin¹²^ORCID,Verhulst Anne S.¹,Van de Put Maarten¹³,Sorée Bart¹²³,Magnus Wim¹³,Mocuta Anda¹,Collaert Nadine¹,Thean Aaron¹,Groeseneken Guido¹²

Affiliation:

1. imec, Kapeldreef 75, 3001 Leuven, Belgium

2. Department of Electrical Engineering, KU Leuven, 3001 Leuven, Belgium

3. Department of Physics, Universiteit Antwerpen, 2020 Antwerpen, Belgium

Funder

Imec Industrial Affiliation Program

IWT-Vlaanderen

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4931890

Reference33 articles.

1. Low-Voltage Tunnel Transistors for Beyond CMOS Logic

2. Tunnel field-effect transistors as energy-efficient electronic switches

3. Tunnel Field-Effect Transistors: State-of-the-Art

4. Tunnel Field-Effect Transistors: Prospects and Challenges

5. On the Possibility of Obtaining MOSFET-Like Performance and Sub-60-mV/dec Swing in 1-D Broken-Gap Tunnel Transistors

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