Tungsten-doped Ge2Sb2Te5 phase change material for high-speed optical switching devices-Reference-Cited by-同舟云学术

Tungsten-doped Ge2Sb2Te5 phase change material for high-speed optical switching devices

Published:2020-03-30 Issue:13 Volume:116 Page:131901
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Guo Pengfei¹^ORCID,Burrow Joshua A.¹^ORCID,Sevison Gary A.¹²^ORCID,Kwon Heungdong³,Perez Christopher³^ORCID,Hendrickson Joshua R.²,Smith Evan M.²⁴,Asheghi Mehdi³,Goodson Kenneth E.³,Agha Imad¹⁵,Sarangan Andrew M.¹^ORCID

Affiliation:

1. Department of Electro-Optics and Photonics, University of Dayton, Dayton, Ohio 45469, USA

2. Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433, USA

3. Department of Mechanical Engineering, Stanford University, Stanford, California 94305, USA

4. KBR, Beavercreek, Ohio 45431, USA

5. Department of Physics, University of Dayton, Dayton, Ohio 45469, USA

Funder

National Science Foundation

Air Force Office of Scientific Research

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5142552

Reference32 articles.

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5. Investigation of Crystallization Behavior of Sputter-Deposited Nitrogen-Doped Amorphous Ge2Sb2Te5Thin Films

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