Migration processes of the As interstitial in GaAs
Author:
Affiliation:
1. Sandia National Laboratories, Albuquerque, New Mexico 87185-1415, USA
Funder
Sandia National Laboratories (Sandia)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4969049
Reference51 articles.
1. Model of defect reactions and the influence of clustering in pulse-neutron-irradiated Si
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4. Native defects in gallium arsenide
5. Simple intrinsic defects in gallium arsenide
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