Symmetry breaking for current-induced magnetization switching

Author:

Liu Liang1,Zhao Tieyang2,Lin Weinan23,Shu Xinyu24,Zhou Jing25,Zheng Zhenyi2,Chen Hongliang1,Jia Lanxin2,Chen Jingsheng2567ORCID

Affiliation:

1. Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), School of Physics and Astronomy, Shanghai Jiao Tong University 1 , Shanghai 200240, China

2. Department of Materials Science and Engineering, National University of Singapore 2 , Singapore 117575, Singapore

3. Department of Physics, Jiujiang Research Institute, Xiamen University 3 , Xiamen 361005, China

4. State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University 4 , 100084 Beijing, China

5. Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR) 5 , Singapore 138643, Singapore

6. Suzhou Research Institute, National University of Singapore 6 , Suzhou 215123, China

7. Chongqing Research Institute, National University of Singapore 7 , Chongqing 401120, China

Abstract

Electromagnetic phenomena, such as magnetization switching, are guided by parity and time-reversal symmetries. Magnetic field and magnetization are time-odd axial vectors. Therefore, the magnetic field can switch magnetization reversibly. In contrast, the electric field is a time-even polar vector that cannot directly switch magnetization. For magnetic recording, an electrical coil-generated local magnetic field is used to switch the magnetic bit. However, in order to integrate the magnetic functionality, e.g., nonvolatile magnetic memory with high speed and low energy consumption, into the chip, it is essential to implement the magnetization switching by an electrical current, where the current induces other axial vectors through spin-transfer torque or spin–orbit torque (SOT). As an energy-efficient tool of magnetization switching, current-induced SOT has been intensively studied for the past decade, which holds great promise in the next generation of magnetic memories and magnetic logic devices [A. Manchon et al., Rev. Mod. Phys. 91, 035004 (2019); X. Han et al., Appl. Phys. Lett. 118, 120502 (2021); C. Song et al., Prog. Mater. Sci. 118, 100761 (2021); Q. Shao et al., IEEE Trans. Magn. 57, 21076639 (2021); J. Ryu et al., Adv. Mater. 32, 1907148 (2020); Y. Cao et al., iScience 23, 101614 (2020)]. In this review, we will first give the basic principle of the symmetry considerations for current-induced magnetization switching. Then, different methods to break the mirror symmetry for deterministic SOT switching will be discussed, together with examples that contain recent progress. In the end, we will give a discussion on the challenges and perspectives of the symmetry designs for SOT, which aim to inspire future fundamental studies and device applications.

Funder

Ministry of Education, Singapore

Publisher

AIP Publishing

Subject

General Physics and Astronomy

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