Demonstrating Current-Driven Anomalous Hall Resistivity in Epitaxial Pt(3 nm)/Fe<sub>4</sub>N(≤6 nm)/MgO Heterostructures toward Spintronic Devices-Reference-Cited by-同舟云学术

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Demonstrating Current-Driven Anomalous Hall Resistivity in Epitaxial Pt(3 nm)/Fe₄N(≤6 nm)/MgO Heterostructures toward Spintronic Devices

Published:2024-06-13 Issue:12 Volume:7 Page:13952-13958
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Shi Xiaohui¹^ORCID,Du Lulu¹,Xiao Ke¹,Ping Qingming¹,Sun Xiaoyan¹,Mi Wenbo²^ORCID

Affiliation:

1. School of Physics and Electronic Engineering, Linyi University, Linyi 276000, China

2. Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin 300354, China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Shandong Province

College Student Innovation Training Program of Linyi University

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.4c02261

Reference39 articles.

1. Controlling spin current polarization through non-collinear antiferromagnetism

2. Symmetry breaking for current-induced magnetization switching

3. Sign reversal and manipulation of anomalous Hall resistivity in facing-target sputtered Pt/Mn4N bilayers

4. Spin-Torque Switching with the Giant Spin Hall Effect of Tantalum

5. Spintronics for Energy- Efficient Computing: An Overview and Outlook

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