Transmission electron microscopy assessment of the Si enhancement of Ti∕Al∕Ni∕Au Ohmic contacts to undoped AlGaN∕GaN heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2218262
Reference29 articles.
1. 30-W/mm GaN HEMTs by Field Plate Optimization
2. 12 W∕mm power density AlGaN∕GaN HEMTs on sapphire substrate
3. AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz
4. High-temperature electronics - a role for wide bandgap semiconductors?
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3. Alloyed Si/Al-based ohmic contacts to AlGaN/GaN nitride heterostructures;Semiconductors;2017-04
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