p‐type doping in Si molecular beam epitaxy by coevaporation of boron
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94965
Reference6 articles.
1. Acceptor dopants in silicon molecular‐beam epitaxy
2. Arbitrary doping profiles produced by Sb‐doped Si MBE
3. Silicon molecular beam epitaxy with antimony ion doping
4. On baking a cryopumped UHV system
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