Charge‐coupled devices in epitaxial HgCdTe/CdTe heterostructure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.92713
Reference6 articles.
1. Hg0.7Cd0.3Te charge‐coupled device shift registers
2. Liquid Phase Growth of HgCdTe Epitaxial Layers
3. HgCdTe/CdTe heterostructure diodes and mosaics
4. High‐performance backside‐illuminated Hg0.78Cd0.22Te/CdTe (λCO=10 μm) planar diodes
5. Feasibility Study Of Charge Transfer Devices In HgCdTe/CdTe Heterostructures
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1. Interactions of Energetic Particle Radiation With a MCT $({\rm x}=0.48)$ P on N Detector Array;IEEE Transactions on Nuclear Science;2012-04
2. N‐channel enhancement mode field‐effect transistors in Hg1−xCdxTe grown by organometallic epitaxy (direct alloy growth process);Applied Physics Letters;1991-09-23
3. Fabrication of n+-InSb/p-Hg1−xCdxTe heterojunction infrared detectors;Infrared Physics;1991-01
4. Intrinsic infrared detectors;Progress in Quantum Electronics;1988-01
5. Liquid Phase Epitaxy of Hg1−xCdxTe from Te Solutions: A Route to IR Detector Structures;MRS Proceedings;1986
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