Microstructural improvements of InP on GaAs (001) grown by molecular beam epitaxy by in situ hydrogenation and postgrowth annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3077610
Reference33 articles.
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2. 64°C continuous-wave operation of 1.5-μm vertical-cavity laser
3. GaAlAs/GaAs metamorphic Bragg mirror for long wavelength VCSELs
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