Influence of Na and Ga on the electrical properties of perfect 60° dislocations in Cu(In, Ga)Se2 thin-film photovoltaic absorbers-Reference-Cited by-同舟云学术

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Influence of Na and Ga on the electrical properties of perfect 60° dislocations in Cu(In, Ga)Se2 thin-film photovoltaic absorbers

Published:2018-04-28 Issue:16 Volume:123 Page:165705
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Barragan-Yani D.¹,Albe K.¹^ORCID

Affiliation:

1. Technische Universität Darmstadt, Institut für Materialwissenschaft Fachgebiet Materialmodellierung, Otto-Berndt-Str. 3, 64287 Darmstadt, Germany

Funder

Helmholtz-Gemeinschaft - Helmholtz Virtual Insitute HVI-520

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5026483

Reference50 articles.

1. Chalcogenide Photovoltaics

2. Origins of electrostatic potential wells at dislocations in polycrystalline Cu(In,Ga)Se2 thin films

3. Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence

4. Electron scattering due to threading edge dislocations in n-type wurtzite GaN

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. In silico investigation of Cu(In,Ga)Se2-based solar cells;Physical Chemistry Chemical Physics;2020

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