Selective Ge deposition on Si using thermal decomposition of GeH4
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96011
Reference4 articles.
1. Selective epitaxy using silane and germane
2. Epitaxial growth of Ge on 〈100〉 Si by a simple chemical vapor deposition technique
3. The heteroepitaxy of Ge on Si: A comparison of chemical vapor and vacuum deposited layers
4. Investigation of crystallographic properties of thin germanium crystals grown on silicon substrates by chemical vapor deposition
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2. One-Step Cost-Effective Growth of High-Quality Epitaxial Ge Films on Si (100) Using a Simplified PECVD Reactor;Electronic Materials;2021-10-10
3. Si-capping-induced surface roughening on the strip structures of Ge selectively grown on an Si substrate;Journal of Vacuum Science & Technology B;2021-07
4. Langmuir-Type Expressions for In-Situ Co-Doping of C with B or P in Si1–xGex Epitaxial Growth by Chemical Vapor Deposition;ECS Journal of Solid State Science and Technology;2021-06-01
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