An analytical study of thep/njunction space‐charge region under high forward voltage
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339706
Reference17 articles.
1. Effects of Electrons and Holes on the Transition Layer Characteristics of Linearly Graded P-N Junctions
2. On the Mathematical Theory of the Linearly-Graded P-N Junction
3. Transition region capacitance of diffused p-n junctions
4. The capacitance of p-n junctions
5. Characterization of space-charge properties of a linearly graded p-n junction by an approximate "Regional" analysis method
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. An analytical model for space-charge region capacitance based on practical doping profiles under any bias conditions;Solid-State Electronics;2001-01
2. Comments on ‘‘An analytical study of thep‐njunction space‐charge region under high forward voltage’’ [J. Appl. Phys.62, 948 (1987)];Journal of Applied Physics;1989-12-15
3. Analytical base‐collector heterojunction capacitance model including collector current effects;Journal of Applied Physics;1989-07
4. Analytical investigation of the junction space‐charge region properties of heterojunction semiconductor devices: Application ton‐AlzGa1−zAs/p‐GaAs system;Journal of Applied Physics;1988-06-15
5. Capacitance of semiconductor p-n junction space-charge layers: an overview;Proceedings of the IEEE;1988
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