An analytical model for space-charge region capacitance based on practical doping profiles under any bias conditions-Reference-Cited by-同舟云学术

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An analytical model for space-charge region capacitance based on practical doping profiles under any bias conditions

Published:2001-01 Issue:1 Volume:45 Page:159-167
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Ma Pingxi,Linder Martin,Sanden Martin,Zhang Shi-Li,Östling Mikael,Frank Chang M.-C.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference37 articles.

1. Liou JJ, Lindholm FA. Capacitance of semiconductor p–n junction space-charge layers: an overview. Proc IEEE 1988;76(11):1406–22

2. Forward-voltage capacitance and thickness of p–n junction space-charge regions;Liou;IEEE Trans Electron Dev,1987

3. Thickness of p/n junction space-charge layer;Liou;J Appl Phys,1988

4. Potential distribution and capacitance of a graded p/n junction;Morgan;Bell Syst Tech J,1960

5. An accurate numerical steady-state one-dimensional solution of the p/n junction;DeMari;Solid-State Electron,1968

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